Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy
- Авторы: Fainer N.I.1, Plekhanov A.G.1, Asanov I.P.1,2
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Учреждения:
- Nikolaev Institute of Inorganic Chemistry, Siberian Branch
- Novosibirsk National Research State University (Novosibirsk State University)
- Выпуск: Том 43, № 5 (2017)
- Страницы: 410-416
- Раздел: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/216151
- DOI: https://doi.org/10.1134/S1087659617050042
- ID: 216151
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Аннотация
The element composition and chemical bonds of nanocomposite films of hydrogenated silicon oxycarbonitride fabricated through high-frequency plasma-chemical deposition from initial gas mixtures of 1,1,3,3-tetramethyldisilazane with nitrogen and oxygen in the temperature range 373–973 K depending on the synthesis conditions is studied. The effect of changes in the temperature and chemical composition of the initial gas mixtures on the element composition and types of chemical bonds in SiCxNyOz:H films is investigated.
Об авторах
N. Fainer
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Автор, ответственный за переписку.
Email: nadezhda@niic.nsc.ru
Россия, Novosibirsk, 630090
A. Plekhanov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Email: nadezhda@niic.nsc.ru
Россия, Novosibirsk, 630090
I. Asanov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Novosibirsk National Research State University (Novosibirsk State University)
Email: nadezhda@niic.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
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