An X-ray spectral and theoretical study of the electronic structure and features of interatomic interactions in phenoxysilanes
- 作者: Danilenko T.1, Tatevosyan M.1, Vlasenko V.1
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隶属关系:
- Research Institute of Physics
- 期: 卷 86, 编号 10 (2016)
- 页面: 2344-2349
- 栏目: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/216372
- DOI: https://doi.org/10.1134/S1070363216100169
- ID: 216372
如何引用文章
详细
The electronic structure and features of interatomic interactions providing the Si–O–C6H5 bonds in H4-nSi(OC6H5)n (n = 1–4) were studied by a combined analysis of the X-ray emission and photoelectron spectroscopic data and the results of quantum-chemical calculations. Theoretical calculations were carried out using the density functional theory. The distributions of the density of states were constructed, the correlation energy diagrams were presented, and the main types of interatomic interactions in phenoxysilanes were revealed.
作者简介
T. Danilenko
Research Institute of Physics
编辑信件的主要联系方式.
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, pr. Stachki 194, Rostov-on-Don, 344090
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