Determining the Self-Thermal Impedances of Power Transistors and Diodes of an IGBT Module Based on Its 3D Model

Abstract

An approach to determine self-thermal impedances for construction of a thermal model of a power IGBT module based on the electrothermal analogy method has been considered. Unlike the conventional method, the suggested approach takes into account a change in the thermal resistances depending on the location of a power semiconductor device in the IGBT module. The thermal parameters to construct the model of a power module based on the electrothermal analogy were determined by the finite element method using a 3D model of the IGBT module in the ANSYS environment. The suggested approach is intended to improve the quality of prediction of temperature of chips in the power module under conditions close to operating ones.