A Thermal Model of an IGBT Module Taking into Account Thermal Interconnections between Chips
- 作者: Ilyin M.V.1, Vilkov E.A.1, Gulyaev I.V.1
- 
							隶属关系: 
							- Ogarev Mordovia State University
 
- 期: 卷 90, 编号 1 (2019)
- 页面: 6-10
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231502
- DOI: https://doi.org/10.3103/S106837121901005X
- ID: 231502
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详细
An approach to development of the thermal model of an IGBT module based on the method of electro-thermal analogy is considered. Unlike traditional one-dimensional thermal models, a new model is supplemented with thermal interrelations between chips. The parameters of thermal interrelations were determined using studying the 3D-model of the power module in the ANSYS environment. The proposed model is intended to improve the quality of predicting the temperature of power module chips due to taking into account the thermal mutual influence of the chips.
作者简介
M. Ilyin
Ogarev Mordovia State University
							编辑信件的主要联系方式.
							Email: journal-elektrotechnika@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Saransk, Republic of Mordovia, 430005						
E. Vilkov
Ogarev Mordovia State University
														Email: journal-elektrotechnika@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Saransk, Republic of Mordovia, 430005						
I. Gulyaev
Ogarev Mordovia State University
														Email: journal-elektrotechnika@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Saransk, Republic of Mordovia, 430005						
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