Experimental Determination of Numerical–Analytical Model Coefficients of Electrophysical Processes in Silicon Power Devices
- Authors: Ershov A.B.1, Sharipov I.K.1, Gabrielyan S.Z.1, Anikuev S.V.1
- 
							Affiliations: 
							- Stavropol State Agrarian University
 
- Issue: Vol 89, No 7 (2018)
- Pages: 417-420
- Section: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231457
- DOI: https://doi.org/10.3103/S1068371218070064
- ID: 231457
Cite item
Abstract
A method has been presented of experimental determination of numerical–analytical model coefficients describing electrophysical processes in silicon power devices that does not use “transistance” (the effect of on-again modes) to decrease loss of power in a device. It has been demonstrated that experimental determination of the coefficients allows one to dispense with numerical solutions of the fundamental systems of equations of semiconductors and use a low-level model for solution of practical problems related to the maximum permissible current loads of silicon power devices in regimes specified by a customer.
About the authors
A. B. Ershov
Stavropol State Agrarian University
							Author for correspondence.
							Email: jornal-elektrotechnika@mail.ru
				                					                																			                												                	Russian Federation, 							Stavropol, 355017						
I. K. Sharipov
Stavropol State Agrarian University
														Email: jornal-elektrotechnika@mail.ru
				                					                																			                												                	Russian Federation, 							Stavropol, 355017						
Sh. Zh. Gabrielyan
Stavropol State Agrarian University
														Email: jornal-elektrotechnika@mail.ru
				                					                																			                												                	Russian Federation, 							Stavropol, 355017						
S. V. Anikuev
Stavropol State Agrarian University
														Email: jornal-elektrotechnika@mail.ru
				                					                																			                												                	Russian Federation, 							Stavropol, 355017						
Supplementary files
 
				
			 
					 
						 
						 
						 
						 
				 
  
  
  
  
  Email this article
			Email this article  Open Access
		                                Open Access Access granted
						Access granted Subscription Access
		                                		                                        Subscription Access
		                                					