Experimental Determination of Numerical–Analytical Model Coefficients of Electrophysical Processes in Silicon Power Devices
- Авторлар: Ershov A.B.1, Sharipov I.K.1, Gabrielyan S.Z.1, Anikuev S.V.1
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Мекемелер:
- Stavropol State Agrarian University
- Шығарылым: Том 89, № 7 (2018)
- Беттер: 417-420
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231457
- DOI: https://doi.org/10.3103/S1068371218070064
- ID: 231457
Дәйексөз келтіру
Аннотация
A method has been presented of experimental determination of numerical–analytical model coefficients describing electrophysical processes in silicon power devices that does not use “transistance” (the effect of on-again modes) to decrease loss of power in a device. It has been demonstrated that experimental determination of the coefficients allows one to dispense with numerical solutions of the fundamental systems of equations of semiconductors and use a low-level model for solution of practical problems related to the maximum permissible current loads of silicon power devices in regimes specified by a customer.
Негізгі сөздер
Авторлар туралы
A. Ershov
Stavropol State Agrarian University
Хат алмасуға жауапты Автор.
Email: jornal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
I. Sharipov
Stavropol State Agrarian University
Email: jornal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
Sh. Gabrielyan
Stavropol State Agrarian University
Email: jornal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
S. Anikuev
Stavropol State Agrarian University
Email: jornal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
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