Experimental Determination of Numerical–Analytical Model Coefficients of Electrophysical Processes in Silicon Power Devices

Аннотация

A method has been presented of experimental determination of numerical–analytical model coefficients describing electrophysical processes in silicon power devices that does not use “transistance” (the effect of on-again modes) to decrease loss of power in a device. It has been demonstrated that experimental determination of the coefficients allows one to dispense with numerical solutions of the fundamental systems of equations of semiconductors and use a low-level model for solution of practical problems related to the maximum permissible current loads of silicon power devices in regimes specified by a customer.