Current Transport Mechanism in p-InSb–n-CdTe Heterojunction
- Authors: Petrosyan S.G.1,2, Matevosyan L.M.1,2, Avjyan K.E.1,2, Nersesyan S.R.2
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Affiliations:
- Russian–Armenian University
- Institute of Radiophysics and Electronics
- Issue: Vol 54, No 2 (2019)
- Pages: 146-152
- Section: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/228846
- DOI: https://doi.org/10.3103/S1068337219020051
- ID: 228846
Cite item
Abstract
Based on the analysis of the forward current-voltage characteristics of the p-InSb–n-CdTe heterojunction fabricated by a method of pulsed laser deposition, the existence of two charge injection mechanisms was experimentally confirmed. At relatively small external bias voltages (0.03 V < U < 0.15 V), the current is in a satisfactory agreement with the expression I ~ exp(qU/ηkT) with the ideality factor η = 1. Above 0.18 V, the current-voltage characteristic obeys the law I ~ U3/2 followed by an attainment to the linear section (the cut-off voltage of current is 0.47 V). A theoretical model of current transport is given taking into account the peculiarities of the heterojunction band discontinuity, leading to the origination of inversion layer near the interface.
About the authors
S. G. Petrosyan
Russian–Armenian University; Institute of Radiophysics and Electronics
Email: avjyan@gmail.com
Armenia, Yerevan; Ashtarak
L. M. Matevosyan
Russian–Armenian University; Institute of Radiophysics and Electronics
Email: avjyan@gmail.com
Armenia, Yerevan; Ashtarak
K. E. Avjyan
Russian–Armenian University; Institute of Radiophysics and Electronics
Author for correspondence.
Email: avjyan@gmail.com
Armenia, Yerevan; Ashtarak
S. R. Nersesyan
Institute of Radiophysics and Electronics
Email: avjyan@gmail.com
Armenia, Ashtarak