Current Transport Mechanism in p-InSb–n-CdTe Heterojunction

Аннотация

Based on the analysis of the forward current-voltage characteristics of the p-InSb–n-CdTe heterojunction fabricated by a method of pulsed laser deposition, the existence of two charge injection mechanisms was experimentally confirmed. At relatively small external bias voltages (0.03 V < U < 0.15 V), the current is in a satisfactory agreement with the expression I ~ exp(qU/ηkT) with the ideality factor η = 1. Above 0.18 V, the current-voltage characteristic obeys the law I ~ U^3/2 followed by an attainment to the linear section (the cut-off voltage of current is 0.47 V). A theoretical model of current transport is given taking into account the peculiarities of the heterojunction band discontinuity, leading to the origination of inversion layer near the interface.