Resistive switching effect in metal–oxide–metal structures with ZnO:Li oxide layer

Abstract

The resistive switching effect in metal–oxide–metal (MOM) structures has been investigated, where the 10% Li-doped ZnO layer was used as an oxide layer, as well as Pt and 20% fluorine doped SnO₂ (SnO₂:F) were used as a bottom electrodes. The current–voltage (I–V) and switching (I–t) characteristics of Ag/ZnO:Li/Pt and Ag/ZnO:Li/SnO₂:F structures were investigated. The unipolar resistive switching is detected in the structures with the Pt, while the use of transparent conductive SnO₂:F electrode instead of Pt, results to the bipolar memory effect.