Resistive switching effect in metal–oxide–metal structures with ZnO:Li oxide layer
- Авторы: Igityan A.1
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Учреждения:
- Institute for Physical Research
- Выпуск: Том 51, № 2 (2016)
- Страницы: 168-173
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3372/article/view/227964
- DOI: https://doi.org/10.3103/S1068337216020109
- ID: 227964
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Аннотация
The resistive switching effect in metal–oxide–metal (MOM) structures has been investigated, where the 10% Li-doped ZnO layer was used as an oxide layer, as well as Pt and 20% fluorine doped SnO2 (SnO2:F) were used as a bottom electrodes. The current–voltage (I–V) and switching (I–t) characteristics of Ag/ZnO:Li/Pt and Ag/ZnO:Li/SnO2:F structures were investigated. The unipolar resistive switching is detected in the structures with the Pt, while the use of transparent conductive SnO2:F electrode instead of Pt, results to the bipolar memory effect.
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Об авторах
A. Igityan
Institute for Physical Research
Автор, ответственный за переписку.
Email: igityan.arsen@gmail.com
Армения, Ashtarak