卷 44, 编号 7 (2017)

GaAs/Ge/GaAs heterostructures in which the GaAs layer lattice on Ge is rotated at a right angle to the substrate plane are grown by molecular-beam epitaxy (MBE). Such heterostructures are grown in different epitaxial setups for GaAs and for Ge with wafer transfer through air tor the first time. It is proposed to use surfactants (Bi, Sb) to control GaAs layer nucleation on Ge.

Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi–Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at high carrier concentrations. It is shown that carrier degeneracy under conditions of sufficiently strong heating of intrinsic semiconductor causes strong band gap narrowing. The obtained values of band gap narrowing are compared to experimental results.

A mobile adaptive holographic laser hydrophone based on a dynamic hologram formed in a photorefractive crystal is developed. The hydrophone sensitivity is to –163 dB (rel. 1V/μPa) or 8.6 · 10⁻³ rad/Pa in the frequency range of 1–15 kHz. Field tests of the hydrophone were performed in water area of a sea bay. The results confirm the efficiency of the use of measuring systems based on adaptive holographic interferometers to solve problems of recording weak signals (acoustic, hydroacoustic, and others) under non-laboratory conditions.

The possibility of accumulating an excess energy in materials–neutron absorbers due to the transition of nuclei to isomeric states during radiative captures of neutrons by stable isotope nuclei with smaller mass is shown. The relation allowing estimation of the parameters of nuclide kinetics, i.e., the processes of neutron capture by nuclei, the formation and decay of isomeric states of nuclei, is derived.