Отправить статью по E-mail Effect of degenerate carriers on Si band gap narrowing
- Авторы: Mazhukin V.I.1,2, Koroleva O.N.1,2, Mazhukin A.V.1,2, Aleshchenko Y.A.2,3
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Учреждения:
- Keldysh Institute of Applied Mathematics
- National Research Nuclear University “MEPhI”
- Lebedev Physical Institute
- Выпуск: Том 44, № 7 (2017)
- Страницы: 198-201
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228397
- DOI: https://doi.org/10.3103/S106833561707003X
- ID: 228397
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Аннотация
Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi–Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at high carrier concentrations. It is shown that carrier degeneracy under conditions of sufficiently strong heating of intrinsic semiconductor causes strong band gap narrowing. The obtained values of band gap narrowing are compared to experimental results.
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V. Mazhukin
Keldysh Institute of Applied Mathematics; National Research Nuclear University “MEPhI”
Автор, ответственный за переписку.
Email: vim@modhef.ru
Россия, Miusskaya pl. 4, Moscow, 125047; Kashirskoe sh. 31, Moscow, 115409
O. Koroleva
Keldysh Institute of Applied Mathematics; National Research Nuclear University “MEPhI”
Email: vim@modhef.ru
Россия, Miusskaya pl. 4, Moscow, 125047; Kashirskoe sh. 31, Moscow, 115409
A. Mazhukin
Keldysh Institute of Applied Mathematics; National Research Nuclear University “MEPhI”
Email: vim@modhef.ru
Россия, Miusskaya pl. 4, Moscow, 125047; Kashirskoe sh. 31, Moscow, 115409
Yu. Aleshchenko
National Research Nuclear University “MEPhI”; Lebedev Physical Institute
Email: vim@modhef.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Leninskii pr. 53, Moscow, 119991
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