Raman scattering in the submicrometer diamond membrane formed by the lift-off technique

Abstract

Spectral characteristics of spontaneous Raman scattering in the submicrometer diamond membrane grown by the hydrogen implantation method are studied in comparison with the single-crystal diamond matrix. A shift in the main line of diamond one-photon excitation (sp³-hybridization) at a frequency of 1324 cm⁻¹ is revealed in the diamond membrane. This fact indicates multiple internal strains (residual compression strains) due to residual defects and is a concequence of the use of the hydrogen implantation method (hydrogen is implanted into diamond to form a sacrificial layer.