Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe 2

S. N. Nikolaev; V. S. Krivobok; E. E. Onishchenko; M. A. Chernopitsskii; V. S. Bagaev

doi:10.3103/S1068335619070066

Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe₂

Авторы: Nikolaev S.N.¹, Krivobok V.S.¹, Onishchenko E.E.¹, Chernopitsskii M.A.¹, Bagaev V.S.¹
Учреждения:
1. Lebedev Physical Institute
Выпуск: Том 46, № 7 (2019)
Страницы: 233-237
Раздел: Article
URL: https://journals.rcsi.science/1068-3356/article/view/229036
DOI: https://doi.org/10.3103/S1068335619070066
ID: 229036

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Methods for production of atomically thin WSe₂ films and optical control of their thickness are developed. For two-monolayer-thick WSe₂ films, photoluminescence spectra associated with the emission of exciton states of the direct fundamental absorption edge at a temperature of 5–70 K are measured. Along with the emission of intrinsic excitons of the bilayer, new defect-related emission lines are detected.