Email this article Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe2
- Authors: Nikolaev S.N.1, Krivobok V.S.1, Onishchenko E.E.1, Chernopitsskii M.A.1, Bagaev V.S.1
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Affiliations:
- Lebedev Physical Institute
- Issue: Vol 46, No 7 (2019)
- Pages: 233-237
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229036
- DOI: https://doi.org/10.3103/S1068335619070066
- ID: 229036
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Abstract
Methods for production of atomically thin WSe2 films and optical control of their thickness are developed. For two-monolayer-thick WSe2 films, photoluminescence spectra associated with the emission of exciton states of the direct fundamental absorption edge at a temperature of 5–70 K are measured. Along with the emission of intrinsic excitons of the bilayer, new defect-related emission lines are detected.
About the authors
S. N. Nikolaev
Lebedev Physical Institute
Author for correspondence.
Email: nikolaev-s@yandex.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
V. S. Krivobok
Lebedev Physical Institute
Email: nikolaev-s@yandex.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
E. E. Onishchenko
Lebedev Physical Institute
Email: nikolaev-s@yandex.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
M. A. Chernopitsskii
Lebedev Physical Institute
Email: nikolaev-s@yandex.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
V. S. Bagaev
Lebedev Physical Institute
Email: nikolaev-s@yandex.ru
Russian Federation, 53 Leninskii Pr., Moscow, 119991
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