Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe 2

S. N. Nikolaev; V. S. Krivobok; E. E. Onishchenko; M. A. Chernopitsskii; V. S. Bagaev

doi:10.3103/S1068335619070066

Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe₂

作者: Nikolaev S.N.¹, Krivobok V.S.¹, Onishchenko E.E.¹, Chernopitsskii M.A.¹, Bagaev V.S.¹
隶属关系:
1. Lebedev Physical Institute
期: 卷 46, 编号 7 (2019)
页面: 233-237
栏目: Article
URL: https://journals.rcsi.science/1068-3356/article/view/229036
DOI: https://doi.org/10.3103/S1068335619070066
ID: 229036

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

Methods for production of atomically thin WSe₂ films and optical control of their thickness are developed. For two-monolayer-thick WSe₂ films, photoluminescence spectra associated with the emission of exciton states of the direct fundamental absorption edge at a temperature of 5–70 K are measured. Along with the emission of intrinsic excitons of the bilayer, new defect-related emission lines are detected.