Email this article Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties
- Authors: Kazakov I.P.1, Pruchkina A.A.1, Bazalevsky M.A.1, Klekovkin A.V.1, Tsekhosh V.I.1
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Affiliations:
- Lebedev Physical Institute
- Issue: Vol 44, No 8 (2017)
- Pages: 223-227
- Section: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228423
- DOI: https://doi.org/10.3103/S1068335617080024
- ID: 228423
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Abstract
GaAs/Ge/GaAs heterostructures in which GaAs layer lattices are rotated at a right angle in the substrate plane are studied. High quality of heterostructures is confirmed by X-ray diffraction and photoluminescence methods.
About the authors
I. P. Kazakov
Lebedev Physical Institute
Author for correspondence.
Email: kazakov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
A. A. Pruchkina
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
M. A. Bazalevsky
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
A. V. Klekovkin
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
V. I. Tsekhosh
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
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