Enviar artigo por via de e-mail Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties
- Autores: Kazakov I.P.1, Pruchkina A.A.1, Bazalevsky M.A.1, Klekovkin A.V.1, Tsekhosh V.I.1
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Afiliações:
- Lebedev Physical Institute
- Edição: Volume 44, Nº 8 (2017)
- Páginas: 223-227
- Seção: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228423
- DOI: https://doi.org/10.3103/S1068335617080024
- ID: 228423
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Resumo
GaAs/Ge/GaAs heterostructures in which GaAs layer lattices are rotated at a right angle in the substrate plane are studied. High quality of heterostructures is confirmed by X-ray diffraction and photoluminescence methods.
Sobre autores
I. Kazakov
Lebedev Physical Institute
Autor responsável pela correspondência
Email: kazakov@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
A. Pruchkina
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
M. Bazalevsky
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
A. Klekovkin
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
V. Tsekhosh
Lebedev Physical Institute
Email: kazakov@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
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