Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties


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GaAs/Ge/GaAs heterostructures in which GaAs layer lattices are rotated at a right angle in the substrate plane are studied. High quality of heterostructures is confirmed by X-ray diffraction and photoluminescence methods.

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I. Kazakov

Lebedev Physical Institute

编辑信件的主要联系方式.
Email: kazakov@sci.lebedev.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991

A. Pruchkina

Lebedev Physical Institute

Email: kazakov@sci.lebedev.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991

M. Bazalevsky

Lebedev Physical Institute

Email: kazakov@sci.lebedev.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991

A. Klekovkin

Lebedev Physical Institute

Email: kazakov@sci.lebedev.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991

V. Tsekhosh

Lebedev Physical Institute

Email: kazakov@sci.lebedev.ru
俄罗斯联邦, Leninskii pr. 53, Moscow, 119991

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