Memristive Properties of Structures Based on (Co41Fe39B20)x(LiNbO3)100–x Nanocomposites
- 作者: Levanov V.1,2, Emel’yanov A.1, Demin V.1, Nikirui K.1,3, Sitnikov A.4, Nikolaev S.1, Vedeneev A.5, Kalinin Y.4, Ryl’kov V.1,5
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隶属关系:
- National Research Center Kurchatov Institute
- Faculty of Physics
- Moscow Institute of Physics and Technology (State University)
- Voronezh State Technical University
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- 期: 卷 63, 编号 5 (2018)
- 页面: 491-496
- 栏目: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199791
- DOI: https://doi.org/10.1134/S1064226918050078
- ID: 199791
如何引用文章
详细
The current‒voltage characteristics of the metal/nanocomposite (NC)/metal structures based on (Co41Fe39B20)x(LiNbO3)100–x NCs 2.4 and 3 μm thick are investigated in the fields of up to ~104 V/cm. The structures are synthesized via ion-beam sputtering of a composite target, in which NCs of different composition are formed in the single cycle at x = 5‒48 at %. The memristive effect (ME) manifesting itself during resistive switching of structures and the storage of incipient states has been detected at x ≈ 10 at %. It is ascertained that the ME depends weakly on used metal (Cu or Cr) contacts and the NC layer thickness, the number of switching cycles (without degradation) exceeds 105, and the ratio between the resistances of high- and low-resistance states, i.e., the Roff/Ron ratio, reaches approximately 65. The detected ME is explained by the fact that oxygen vacancies substantially affect the tunneling conductance of metal-granule chains determining the electric resistance of structures below the percolation threshold.
作者简介
V. Levanov
National Research Center Kurchatov Institute; Faculty of Physics
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182; Moscow, 119991
A. Emel’yanov
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182
V. Demin
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182
K. Nikirui
National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University)
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700
A. Sitnikov
Voronezh State Technical University
Email: vvrylkov@mail.ru
俄罗斯联邦, Voronezh, 394026
S. Nikolaev
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182
A. Vedeneev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: vvrylkov@mail.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
Yu. Kalinin
Voronezh State Technical University
Email: vvrylkov@mail.ru
俄罗斯联邦, Voronezh, 394026
V. Ryl’kov
National Research Center Kurchatov Institute; Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
编辑信件的主要联系方式.
Email: vvrylkov@mail.ru
俄罗斯联邦, Moscow, 123182; Fryazino, Moscow oblast, 141190
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