Memristive Properties of Structures Based on (Co41Fe39B20)x(LiNbO3)100–x Nanocomposites
- Авторлар: Levanov V.1,2, Emel’yanov A.1, Demin V.1, Nikirui K.1,3, Sitnikov A.4, Nikolaev S.1, Vedeneev A.5, Kalinin Y.4, Ryl’kov V.1,5
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Мекемелер:
- National Research Center Kurchatov Institute
- Faculty of Physics
- Moscow Institute of Physics and Technology (State University)
- Voronezh State Technical University
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Шығарылым: Том 63, № 5 (2018)
- Беттер: 491-496
- Бөлім: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199791
- DOI: https://doi.org/10.1134/S1064226918050078
- ID: 199791
Дәйексөз келтіру
Аннотация
The current‒voltage characteristics of the metal/nanocomposite (NC)/metal structures based on (Co41Fe39B20)x(LiNbO3)100–x NCs 2.4 and 3 μm thick are investigated in the fields of up to ~104 V/cm. The structures are synthesized via ion-beam sputtering of a composite target, in which NCs of different composition are formed in the single cycle at x = 5‒48 at %. The memristive effect (ME) manifesting itself during resistive switching of structures and the storage of incipient states has been detected at x ≈ 10 at %. It is ascertained that the ME depends weakly on used metal (Cu or Cr) contacts and the NC layer thickness, the number of switching cycles (without degradation) exceeds 105, and the ratio between the resistances of high- and low-resistance states, i.e., the Roff/Ron ratio, reaches approximately 65. The detected ME is explained by the fact that oxygen vacancies substantially affect the tunneling conductance of metal-granule chains determining the electric resistance of structures below the percolation threshold.
Авторлар туралы
V. Levanov
National Research Center Kurchatov Institute; Faculty of Physics
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182; Moscow, 119991
A. Emel’yanov
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182
V. Demin
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182
K. Nikirui
National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University)
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700
A. Sitnikov
Voronezh State Technical University
Email: vvrylkov@mail.ru
Ресей, Voronezh, 394026
S. Nikolaev
National Research Center Kurchatov Institute
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182
A. Vedeneev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: vvrylkov@mail.ru
Ресей, Fryazino, Moscow oblast, 141190
Yu. Kalinin
Voronezh State Technical University
Email: vvrylkov@mail.ru
Ресей, Voronezh, 394026
V. Ryl’kov
National Research Center Kurchatov Institute; Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Хат алмасуға жауапты Автор.
Email: vvrylkov@mail.ru
Ресей, Moscow, 123182; Fryazino, Moscow oblast, 141190
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