Model describing microwave semiconductor device burnout under the action of a periodic sequence of electric pulses


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详细

A numerical model, as well as a simpler analytical one, which describe heat accumulation in microwave semiconductor devices exposed to high-power electric-pulse trains, are constructed. Conditions are estabtished under which heat is accumulated with each subsequent pulse up to the onset of a catastrophic failure caused by the device burnout. It demonstrated that short-pulse trains with a small pulse period-topulse duration ratio are most dangerous.

作者简介

V. Usychenko

Peter The Great Polytechnic University

编辑信件的主要联系方式.
Email: usychenko@rphf.spbstu.ru
俄罗斯联邦, 29 Polytechnic street, St. Petersburg, 195251

A. Sasunkevich

Mozhaisky Military Space Academy

编辑信件的主要联系方式.
Email: sorokinln@mail.ru
俄罗斯联邦, ul. Zhdanovskaya 13, St. Petersburg, 197082

L. Sorokin

Peter The Great Polytechnic University

Email: sorokinln@mail.ru
俄罗斯联邦, 29 Polytechnic street, St. Petersburg, 195251


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