Model describing microwave semiconductor device burnout under the action of a periodic sequence of electric pulses
- 作者: Usychenko V.1, Sasunkevich A.2, Sorokin L.1
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隶属关系:
- Peter The Great Polytechnic University
- Mozhaisky Military Space Academy
- 期: 卷 61, 编号 5 (2016)
- 页面: 532-540
- 栏目: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/196977
- DOI: https://doi.org/10.1134/S1064226916050120
- ID: 196977
如何引用文章
详细
A numerical model, as well as a simpler analytical one, which describe heat accumulation in microwave semiconductor devices exposed to high-power electric-pulse trains, are constructed. Conditions are estabtished under which heat is accumulated with each subsequent pulse up to the onset of a catastrophic failure caused by the device burnout. It demonstrated that short-pulse trains with a small pulse period-topulse duration ratio are most dangerous.
作者简介
V. Usychenko
Peter The Great Polytechnic University
编辑信件的主要联系方式.
Email: usychenko@rphf.spbstu.ru
俄罗斯联邦, 29 Polytechnic street, St. Petersburg, 195251
A. Sasunkevich
Mozhaisky Military Space Academy
编辑信件的主要联系方式.
Email: sorokinln@mail.ru
俄罗斯联邦, ul. Zhdanovskaya 13, St. Petersburg, 197082
L. Sorokin
Peter The Great Polytechnic University
Email: sorokinln@mail.ru
俄罗斯联邦, 29 Polytechnic street, St. Petersburg, 195251