Email this article Model describing microwave semiconductor device burnout under the action of a periodic sequence of electric pulses
- Authors: Usychenko V.G.1, Sasunkevich A.A.2, Sorokin L.N.1
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Affiliations:
- Peter The Great Polytechnic University
- Mozhaisky Military Space Academy
- Issue: Vol 61, No 5 (2016)
- Pages: 532-540
- Section: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/196977
- DOI: https://doi.org/10.1134/S1064226916050120
- ID: 196977
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Abstract
A numerical model, as well as a simpler analytical one, which describe heat accumulation in microwave semiconductor devices exposed to high-power electric-pulse trains, are constructed. Conditions are estabtished under which heat is accumulated with each subsequent pulse up to the onset of a catastrophic failure caused by the device burnout. It demonstrated that short-pulse trains with a small pulse period-topulse duration ratio are most dangerous.
About the authors
V. G. Usychenko
Peter The Great Polytechnic University
Author for correspondence.
Email: usychenko@rphf.spbstu.ru
Russian Federation, 29 Polytechnic street, St. Petersburg, 195251
A. A. Sasunkevich
Mozhaisky Military Space Academy
Author for correspondence.
Email: sorokinln@mail.ru
Russian Federation, ul. Zhdanovskaya 13, St. Petersburg, 197082
L. N. Sorokin
Peter The Great Polytechnic University
Email: sorokinln@mail.ru
Russian Federation, 29 Polytechnic street, St. Petersburg, 195251
