Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes


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Аннотация

A comparative analysis of the correlators of steady-state thermal and photoinduced stochastic fields (SFs) of concentrations and currents of mobile charge carriers in IR photodiodes and homogeneous semiconductors is presented. It is demonstrated that the correlators of thermal and photoinduced SFs of concentrations of mobile charge carriers are determined using conceptually identical expressions for any structure of the pn junction and arbitrary polarity of applied voltage whereas the correlators of the SFs of photoinduced and dark currents are determined using conceptually identical expressions only for the reverse-biased pn junction with a relatively wide base.

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Авторлар туралы

A. Selyakov

Branch of Ural–Geofizika

Хат алмасуға жауапты Автор.
Email: orion@orion-ir.ru
Ресей, ul. Plekhanova 4, str. 1, Moscow, 111123

I. Burlakov

OAO NPO Orion

Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111123

A. Filachev

OAO NPO Orion

Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111123

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