Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes
- Авторлар: Selyakov A.Y.1, Burlakov I.D.2, Filachev A.M.2
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Мекемелер:
- Branch of Ural–Geofizika
- OAO NPO Orion
- Шығарылым: Том 61, № 3 (2016)
- Беттер: 352-357
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196872
- DOI: https://doi.org/10.1134/S1064226916030165
- ID: 196872
Дәйексөз келтіру
Аннотация
A comparative analysis of the correlators of steady-state thermal and photoinduced stochastic fields (SFs) of concentrations and currents of mobile charge carriers in IR photodiodes and homogeneous semiconductors is presented. It is demonstrated that the correlators of thermal and photoinduced SFs of concentrations of mobile charge carriers are determined using conceptually identical expressions for any structure of the p–n junction and arbitrary polarity of applied voltage whereas the correlators of the SFs of photoinduced and dark currents are determined using conceptually identical expressions only for the reverse-biased p–n junction with a relatively wide base.
Негізгі сөздер
Авторлар туралы
A. Selyakov
Branch of Ural–Geofizika
Хат алмасуға жауапты Автор.
Email: orion@orion-ir.ru
Ресей, ul. Plekhanova 4, str. 1, Moscow, 111123
I. Burlakov
OAO NPO Orion
Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111123
A. Filachev
OAO NPO Orion
Email: orion@orion-ir.ru
Ресей, Kosinskaya ul. 9, Moscow, 111123
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