Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures
- Авторлар: Filatov A.V.1, Susov E.V.1, Karpov V.V.1, Zhilkin V.A.1, Ljubchenko S.P.1, Kusnezov N.S.1, Marushchenko A.V.1
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Мекемелер:
- JSC “Shvabe-Photosystems”
- Шығарылым: Том 62, № 3 (2017)
- Беттер: 326-330
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198170
- DOI: https://doi.org/10.1134/S106422691703010X
- ID: 198170
Дәйексөз келтіру
Аннотация
The time of independent operation tind of indium antimonide photoresistors and photodiodes and photoresistors based on CdхHg1–хTe (х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for CdхHg1–хTe (х ~ 0.3) photoresistors. Time tind of the photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time tind of the photodetectors by optimizing the requirements for the characteristics of InSb and CdхHg1–хTe is discussed.
Авторлар туралы
A. Filatov
JSC “Shvabe-Photosystems”
Хат алмасуға жауапты Автор.
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
E. Susov
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
V. Karpov
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
V. Zhilkin
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
S. Ljubchenko
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
N. Kusnezov
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
A. Marushchenko
JSC “Shvabe-Photosystems”
Email: co-ckb@mail.ru
Ресей, Dnepropetrovskii proezd 4a, Moscow, 117545
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