Issue |
Title |
File |
Vol 62, No 9 (2017) |
Formation of thermal defects in silicon grown by means of float zone melting |
(Eng)
|
Klimanov E.A.
|
Vol 62, No 9 (2017) |
Selective UV photodetectors based on the metal–AlGaN Schottky barrier |
(Eng)
|
Tarasov S.A., Lamkin I.A., Mikhailov I.I., Evseenkov A.S., Solomonov A.V.
|
Vol 62, No 9 (2017) |
Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure |
(Eng)
|
Budtolaev A.K., Grishina T.N., Khakuashev P.E., Chinareva I.V.
|
Vol 62, No 9 (2017) |
Analytical description of avalanche photodiode characteristics. An overview: Part I |
(Eng)
|
Burlakov I.D., Filachev A.M., Kholodnov V.A.
|
Vol 62, No 9 (2017) |
Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays |
(Eng)
|
Nikonov A.V., Davletshin R.V., Iakovleva N.I., Lazarev P.S.
|
Vol 62, No 9 (2017) |
Implementation of the time delay and integration mode in a scanning 576 × 6 focal-plane array of the long-wave infrared range |
(Eng)
|
Kuznetsov P.A., Moshchev I.S.
|
Vol 62, No 9 (2017) |
Nanosecond detector of infrared radiation based on thin pyroelectric films |
(Eng)
|
Ivanov S.D., Kostsov E.G., Sobolev V.S.
|
Vol 62, No 9 (2017) |
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging |
(Eng)
|
Iakovleva N.I., Boltar K.O., Sednev M.V., Nikonov A.V.
|
1 - 8 of 8 Items |
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