Email this article The Influence of Strains on the Ferromagnetic Resonance Spectrum of Submicron Yttrium Iron Garnet Films Obtained by Ion Beam Sputtering
- Authors: Vysotskii S.L.1,2, Khivintsev Y.V.1,2, Kozhevnikov A.V.1, Sakharov V.K.1, Filimonov Y.A.1,2,3, Stognii A.I.4, Novitskii N.N.4, Nikitov S.A.5,2
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
- Chernyshevsky National Research State University
- Yuri Gagarin State Technical University of Saratov
- Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
- Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Issue: Vol 64, No 12 (2019)
- Pages: 1398-1406
- Section: Radio Phenomena in Solids and Plasma
- URL: https://journals.rcsi.science/1064-2269/article/view/201660
- DOI: https://doi.org/10.1134/S1064226919100140
- ID: 201660
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Abstract
The influence of strains on the ferromagnetic resonance (FMR) spectrum of submicron yttrium iron garnet (YIG) films produced by the ion beam sputtering on gadolinium-gallium garnet (GGG) and silicon (Si) substrates is explored. It is shown that the strain influence is displayed as a frequency shift of the absorption maximum in the FMR spectrum. The results indicate that the studied YIG/GGG and YIG/Si films have an efficient magnetoelastic coupling of the spin and elastic subsystems, which suggests that ion beam sputtering of YIG films on GGG and Si substructures can be a promising technique for production of straintronic devices.
About the authors
S. L. Vysotskii
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University
Author for correspondence.
Email: vysotsl@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012
Yu. V. Khivintsev
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University
Email: vysotsl@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012
A. V. Kozhevnikov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Email: vysotsl@gmail.com
Russian Federation, Saratov, 410019
V. K. Sakharov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Email: vysotsl@gmail.com
Russian Federation, Saratov, 410019
Yu. A. Filimonov
Kotelnikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences; Chernyshevsky National Research State University; Yuri Gagarin State Technical University of Saratov
Email: vysotsl@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012; Saratov, 410054
A. I. Stognii
Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: vysotsl@gmail.com
Belarus, Minsk, 220072
N. N. Novitskii
Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus
Email: vysotsl@gmail.com
Belarus, Minsk, 220072
S. A. Nikitov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; Chernyshevsky National Research State University
Email: vysotsl@gmail.com
Russian Federation, Moscow, 125009; Saratov, 410012
