Renormalization of the Landé Factor and Effective Mass in Small Spherical Quantum Dots
- 作者: Oshurko V.B.1, Karpova E.E.1, Mandel’ A.M.1
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隶属关系:
- Stankin Moscow State Technological University
- 期: 卷 64, 编号 10 (2019)
- 页面: 1127-1134
- 栏目: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/201386
- DOI: https://doi.org/10.1134/S1064226919100085
- ID: 201386
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详细
Using the modified Kane theory, a model has been built for describing the formation of the effective mass and g factor of bound electrons in quantum dots several nanometers in size. It is shown that these values depend critically on the dot size and are significantly different from the corresponding values for the bulk semiconductor. The effective mass and g factor affect the binding energy of an electron on a quantum dot in a magnetic field and are determined by this binding energy, which ultimately forms the local band structure in the vicinity of the quantum dot. In the covariant InAs/AlSb heterostructure, the characteristics have been calculated for which a quantum dot localizes no more than one electron without localizing holes and therefore can serve as a prototype of a solid-state qubit with the controlled g factor.
作者简介
V. Oshurko
Stankin Moscow State Technological University
Email: arkadimandel@mail.ru
俄罗斯联邦, Moscow, 127994
E. Karpova
Stankin Moscow State Technological University
Email: arkadimandel@mail.ru
俄罗斯联邦, Moscow, 127994
A. Mandel’
Stankin Moscow State Technological University
编辑信件的主要联系方式.
Email: arkadimandel@mail.ru
俄罗斯联邦, Moscow, 127994
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