Solid-State Modulator for High-Power Microwave Devices with Grid Control
- 作者: Komarov D.A.1,2, Maslennikov S.P.2
-
隶属关系:
- Toriy Scientific Production Association
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- 期: 卷 64, 编号 1 (2019)
- 页面: 64-68
- 栏目: Microwave Electronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200277
- DOI: https://doi.org/10.1134/S1064226919010091
- ID: 200277
如何引用文章
详细
A solid-state pulse modulator for high-power microwave devices with grid control has been designed and tested. The output stage of this modulator uses a switching unit with two microsecond-band high-voltage switches toggled in antiphase. These switches were constructed on series-connected MOS transistors, have nanosecond switching times, and operate at voltages of as high as 10 kV. The modulator has demonstrated stable operation in tests performed to evaluate its potential to control high-power microwave devices.
作者简介
D. Komarov
Toriy Scientific Production Association; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: spmaslennikov@mephi.ru
俄罗斯联邦, Moscow, 117393; Moscow, 115409
S. Maslennikov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: spmaslennikov@mephi.ru
俄罗斯联邦, Moscow, 115409
补充文件
