电邮这篇文章 High-Voltage Solid State Switches for Grid Modulators of High-Power Microwave Devices
- 作者: Maslennikov S.P.1, Serebryakova A.S.1,2
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隶属关系:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Torii Research & Production Enterprise
- 期: 卷 63, 编号 1 (2018)
- 页面: 71-74
- 栏目: Microwave Electronics
- URL: https://journals.rcsi.science/1064-2269/article/view/199414
- DOI: https://doi.org/10.1134/S1064226918010096
- ID: 199414
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详细
Microsecond high-voltage solid state switches based on metal–oxide–semiconductor field-effect transistors for application in pulse grid modulators of high-power microwave devices have been developed and investigated. Stable switching ranges of the switches based on unipolar and bipolar control circuits have been established. Combined switches with operating voltages of up to 10 kV and pulse currents of up to 12 A have been experimentally implemented.
作者简介
S. Maslennikov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: spmaslennikov@mephi.ru
俄罗斯联邦, Moscow, 115409
A. Serebryakova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); Torii Research & Production Enterprise
Email: spmaslennikov@mephi.ru
俄罗斯联邦, Moscow, 115409; Moscow, 117393
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