Structure and Morphology of Zinc Oxide Nanorods
- 作者: Irzhak A.V.1,2, Koledov V.V.3, Lega P.V.3, Kuchin D.S.3, Orlov A.P.3, Tabachkova N.Y.1, Mazaev P.V.3, von Gratowski S.V.3, Shavrov V.G.3, Shelyakov A.V.4, Red’kin A.N.2, Evstaf’eva M.V.2
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隶属关系:
- National University of Science and Technology MISiS
- Institute of Microelectronics Technology and High Purity Materials
- Kotel’nikov Institute of Radio Engineering and Electronics
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- 期: 卷 63, 编号 1 (2018)
- 页面: 75-79
- 栏目: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/199410
- DOI: https://doi.org/10.1134/S1064226918010072
- ID: 199410
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详细
The properties of nanorods made of high-energy-gap ZnxMg1 – xO semiconductors are experimentally investigated using the new system of 3D manipulation of individual nanospecimens. The technology used to prepare ZnxMg1 – xO nanorods via gas-phase deposition on a substrate, the process whereby individual nanorods are selected by means of nanocomposite tweezers with the shape-memory effect in the vacuum chamber of a two-beam scanning microscope, and the results obtained when their structure and morphology are experimentally studied using transmission electron spectroscopy are described. The prospects that nanophotonic, nanosensorial, and nanoelectronic devices can be fabricated from ZnxMg1 – xO nanorods via the new nanomanipulation technique are discussed.
作者简介
A. Irzhak
National University of Science and Technology MISiS; Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 119049; Chernogolovka, Moscow oblast, 142432
V. Koledov
Kotel’nikov Institute of Radio Engineering and Electronics
编辑信件的主要联系方式.
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
P. Lega
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
D. Kuchin
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
A. Orlov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
N. Tabachkova
National University of Science and Technology MISiS
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 119049
P. Mazaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
S. von Gratowski
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
V. Shavrov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 125009
A. Shelyakov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: victor_koledov@mail.ru
俄罗斯联邦, Moscow, 115409
A. Red’kin
Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
M. Evstaf’eva
Institute of Microelectronics Technology and High Purity Materials
Email: victor_koledov@mail.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
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