Measuring Devices Based on Molecular-Electronic Transducers


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Abstract

The basic principles of operation of the sensors based on molecular-electronic transducers (METs) are described. The review of investigations of physical processes into MET and their operating characteristics are considered. Modern MET manufacturing technologies and the production methods and the new applications of planar microelectronic METs are discussed. An overview of devices and systems based on the METs is given.

About the authors

A. S. Bugaev

Moscow Institute of Physics and Technology (State University); Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Moscow, 125009

A. N. Antonov

Moscow Institute of Physics and Technology (State University); NordLab LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141700

B. M. Agafonov

Moscow Institute of Physics and Technology (State University); R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

K. S. Belotelov

R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141701

S. S. Vergeles

Moscow Institute of Physics and Technology (State University); Landau Institute of Theoretical Physics, Russian Academy of Sciences

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Chernogolovka, Moscow oblast, 142432

P. V. Dudkin

Moscow Institute of Physics and Technology (State University)

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700

E. V. Egorov

Moscow Institute of Physics and Technology (State University); R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

I. V. Egorov

Moscow Institute of Physics and Technology (State University); R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

D. A. Zhevnenko

Moscow Institute of Physics and Technology (State University); AO Molecular Electronics Research Institute; Seismotronics LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Zelenograd, 124460; Moscow, 141700

S. N. Zhabin

Moscow Institute of Physics and Technology (State University)

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700

D. L. Zaitsev

Moscow Institute of Physics and Technology (State University); NordLab LLC; R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

T. V. Krishtop

Seismotronics LLC

Email: vgkvgk@mail.ru
Russian Federation, Moscow, 141700

A. V. Neeshpapa

Moscow Institute of Physics and Technology (State University); R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

V. G. Popov

Moscow Institute of Physics and Technology (State University); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Chernogolovka, Moscow oblast, 142432

V. V. Uskov

Moscow Institute of Physics and Technology (State University)

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700

A. S. Shabalina

Moscow Institute of Physics and Technology (State University); R-sensors LLC

Email: vgkvgk@mail.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700; Dolgoprudnyi, Moscow oblast, 141701

V. G. Krishtop

Seismotronics LLC; Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences

Author for correspondence.
Email: vgkvgk@mail.ru
Russian Federation, Moscow, 141700; Chernogolovka, Moscow oblast, 142432


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