Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures
- 作者: Prudaev A.1, Verkholetov M.1,2
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隶属关系:
- Tomsk State University
- Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
- 期: 卷 45, 编号 6 (2019)
- 页面: 566-569
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208333
- DOI: https://doi.org/10.1134/S1063785019060154
- ID: 208333
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详细
The results of a study of carrier transfer and recharging of deep levels in semiconductor structures for ionizing radiation detectors are presented. Resistive-type arsenide–gallium structures with Schottky barriers and uniform distribution of deep chromium acceptors and donor EL2 centers have been studied. Solving the continuity and Poisson equations using the commercial design package, the effect of the volume depletion of detector structures by electrons with an increase in the applied voltage has been observed. It is established that the nonlinearity of the volt-ampere characteristics of structures occurs due to a change in the type of conductivity upon transition from an equilibrium to a nonequilibrium state. In this case, structures with initial (equilibrium) hole-type conductivity have close to linear volt–ampere characteristics.
作者简介
A. Prudaev
Tomsk State University
编辑信件的主要联系方式.
Email: funcelab@gmail.com
俄罗斯联邦, Tomsk, 634050
M. Verkholetov
Tomsk State University; Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: funcelab@gmail.com
俄罗斯联邦, Tomsk, 634050; Moscow, 119991