Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures
- Authors: Prudaev A.I.1, Verkholetov M.G.1,2
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Affiliations:
- Tomsk State University
- Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
- Issue: Vol 45, No 6 (2019)
- Pages: 566-569
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208333
- DOI: https://doi.org/10.1134/S1063785019060154
- ID: 208333
Cite item
Abstract
The results of a study of carrier transfer and recharging of deep levels in semiconductor structures for ionizing radiation detectors are presented. Resistive-type arsenide–gallium structures with Schottky barriers and uniform distribution of deep chromium acceptors and donor EL2 centers have been studied. Solving the continuity and Poisson equations using the commercial design package, the effect of the volume depletion of detector structures by electrons with an increase in the applied voltage has been observed. It is established that the nonlinearity of the volt-ampere characteristics of structures occurs due to a change in the type of conductivity upon transition from an equilibrium to a nonequilibrium state. In this case, structures with initial (equilibrium) hole-type conductivity have close to linear volt–ampere characteristics.
About the authors
A. I. Prudaev
Tomsk State University
Author for correspondence.
Email: funcelab@gmail.com
Russian Federation, Tomsk, 634050
M. G. Verkholetov
Tomsk State University; Institute of Nanotechnologies for Microelectronics, Russian Academy of Sciences
Email: funcelab@gmail.com
Russian Federation, Tomsk, 634050; Moscow, 119991