Effect of scattering of sputtered atoms on the growth rate of films fabricated by magnetron sputtering
- 作者: Mitin D.1, Serdobintsev A.1
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隶属关系:
- Saratov State University
- 期: 卷 43, 编号 9 (2017)
- 页面: 814-816
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205954
- DOI: https://doi.org/10.1134/S1063785017090073
- ID: 205954
如何引用文章
详细
The results of the theoretical calculations of the fraction of unscattered sputtered atoms in magnetron sputtering are presented. The experimentally obtained pressure dependence of the growth rate of silicon films reveals a correlation with the theoretically calculated dependence of the fraction of unscattered sputtered atoms. If the pressure is raised from 1.5 to 8.5 mTorr, the growth rate of silicon films decreases by 25%, while the fraction of unscattered sputtered atoms over the cathode–substrate distance decreases by as much as 90%.
作者简介
D. Mitin
Saratov State University
编辑信件的主要联系方式.
Email: mitindm@mail.ru
俄罗斯联邦, Saratov, 410012
A. Serdobintsev
Saratov State University
Email: mitindm@mail.ru
俄罗斯联邦, Saratov, 410012