Effect of scattering of sputtered atoms on the growth rate of films fabricated by magnetron sputtering
- Authors: Mitin D.M.1, Serdobintsev A.A.1
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Affiliations:
- Saratov State University
- Issue: Vol 43, No 9 (2017)
- Pages: 814-816
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205954
- DOI: https://doi.org/10.1134/S1063785017090073
- ID: 205954
Cite item
Abstract
The results of the theoretical calculations of the fraction of unscattered sputtered atoms in magnetron sputtering are presented. The experimentally obtained pressure dependence of the growth rate of silicon films reveals a correlation with the theoretically calculated dependence of the fraction of unscattered sputtered atoms. If the pressure is raised from 1.5 to 8.5 mTorr, the growth rate of silicon films decreases by 25%, while the fraction of unscattered sputtered atoms over the cathode–substrate distance decreases by as much as 90%.
About the authors
D. M. Mitin
Saratov State University
Author for correspondence.
Email: mitindm@mail.ru
Russian Federation, Saratov, 410012
A. A. Serdobintsev
Saratov State University
Email: mitindm@mail.ru
Russian Federation, Saratov, 410012