A two-dimensional electron gas in donor–acceptor doped backward heterostructures
- 作者: Pashkovskii A.1, Novikov S.1, Lapin V.1, Lukashin V.1
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隶属关系:
- ISTOK Research and Production Corporation
- 期: 卷 43, 编号 6 (2017)
- 页面: 562-566
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205024
- DOI: https://doi.org/10.1134/S1063785017060232
- ID: 205024
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详细
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
作者简介
A. Pashkovskii
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
S. Novikov
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
V. Lapin
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
V. Lukashin
ISTOK Research and Production Corporation
编辑信件的主要联系方式.
Email: solidstate10@mail.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190