A two-dimensional electron gas in donor–acceptor doped backward heterostructures
- Authors: Pashkovskii A.B.1, Novikov S.I.1, Lapin V.G.1, Lukashin V.M.1
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Affiliations:
- ISTOK Research and Production Corporation
- Issue: Vol 43, No 6 (2017)
- Pages: 562-566
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205024
- DOI: https://doi.org/10.1134/S1063785017060232
- ID: 205024
Cite item
Abstract
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
About the authors
A. B. Pashkovskii
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
Russian Federation, Fryazino, Moscow oblast, 141190
S. I. Novikov
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
Russian Federation, Fryazino, Moscow oblast, 141190
V. G. Lapin
ISTOK Research and Production Corporation
Email: solidstate10@mail.ru
Russian Federation, Fryazino, Moscow oblast, 141190
V. M. Lukashin
ISTOK Research and Production Corporation
Author for correspondence.
Email: solidstate10@mail.ru
Russian Federation, Fryazino, Moscow oblast, 141190