The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
- 作者: Bochkareva N.1, Ivanov A.1, Klochkov A.1, Tarala V.2, Shreter Y.1
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隶属关系:
- Ioffe Physical Technical Institute
- North-Caucasus Federal University
- 期: 卷 42, 编号 11 (2016)
- 页面: 1099-1102
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201922
- DOI: https://doi.org/10.1134/S1063785016110146
- ID: 201922
如何引用文章
详细
It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.
作者简介
N. Bochkareva
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Ivanov
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Klochkov
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Tarala
North-Caucasus Federal University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, Stavropol, 355029
Yu. Shreter
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021