The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
- Авторы: Bochkareva N.1, Ivanov A.1, Klochkov A.1, Tarala V.2, Shreter Y.1
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Учреждения:
- Ioffe Physical Technical Institute
- North-Caucasus Federal University
- Выпуск: Том 42, № 11 (2016)
- Страницы: 1099-1102
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201922
- DOI: https://doi.org/10.1134/S1063785016110146
- ID: 201922
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Аннотация
It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.
Об авторах
N. Bochkareva
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Ivanov
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Klochkov
Ioffe Physical Technical Institute
Email: y.shreter@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Tarala
North-Caucasus Federal University
Email: y.shreter@mail.ioffe.ru
Россия, Stavropol, 355029
Yu. Shreter
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: y.shreter@mail.ioffe.ru
Россия, St. Petersburg, 194021