The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Аннотация

It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm² stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.