The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

N. I. Bochkareva; A. M. Ivanov; A. V. Klochkov; V. A. Tarala; Yu. G. Shreter

doi:10.1134/S1063785016110146

The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Autores: Bochkareva N.¹, Ivanov A.¹, Klochkov A.¹, Tarala V.², Shreter Y.¹
Afiliações:
1. Ioffe Physical Technical Institute
2. North-Caucasus Federal University
Edição: Volume 42, Nº 11 (2016)
Páginas: 1099-1102
Seção: Article
URL: https://journals.rcsi.science/1063-7850/article/view/201922
DOI: https://doi.org/10.1134/S1063785016110146
ID: 201922

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It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm² stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.