Modification of the properties of vanadium dioxide by plasma-immersion ion implantation
- Авторы: Burdyukh S.1, Stefanovich G.1, Pergament A.1, Berezina O.1, Avdeev N.1, Cheremisin A.1
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Учреждения:
- Petrozavodsk State University
- Выпуск: Том 42, № 1 (2016)
- Страницы: 32-35
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196720
- DOI: https://doi.org/10.1134/S1063785016010041
- ID: 196720
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Аннотация
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.
Об авторах
S. Burdyukh
Petrozavodsk State University
Автор, ответственный за переписку.
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910
G. Stefanovich
Petrozavodsk State University
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910
A. Pergament
Petrozavodsk State University
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910
O. Berezina
Petrozavodsk State University
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910
N. Avdeev
Petrozavodsk State University
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910
A. Cheremisin
Petrozavodsk State University
Email: burduch@gmail.com
Россия, Petrozavodsk, 185910