Modification of the properties of vanadium dioxide by plasma-immersion ion implantation
- Authors: Burdyukh S.V.1, Stefanovich G.B.1, Pergament A.L.1, Berezina O.Y.1, Avdeev N.A.1, Cheremisin A.B.1
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Affiliations:
- Petrozavodsk State University
- Issue: Vol 42, No 1 (2016)
- Pages: 32-35
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196720
- DOI: https://doi.org/10.1134/S1063785016010041
- ID: 196720
Cite item
Abstract
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.
About the authors
S. V. Burdyukh
Petrozavodsk State University
Author for correspondence.
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910
G. B. Stefanovich
Petrozavodsk State University
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910
A. L. Pergament
Petrozavodsk State University
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910
O. Ya. Berezina
Petrozavodsk State University
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910
N. A. Avdeev
Petrozavodsk State University
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910
A. B. Cheremisin
Petrozavodsk State University
Email: burduch@gmail.com
Russian Federation, Petrozavodsk, 185910