Modification of the properties of vanadium dioxide by plasma-immersion ion implantation
- Autores: Burdyukh S.1, Stefanovich G.1, Pergament A.1, Berezina O.1, Avdeev N.1, Cheremisin A.1
-
Afiliações:
- Petrozavodsk State University
- Edição: Volume 42, Nº 1 (2016)
- Páginas: 32-35
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196720
- DOI: https://doi.org/10.1134/S1063785016010041
- ID: 196720
Citar
Resumo
The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.
Sobre autores
S. Burdyukh
Petrozavodsk State University
Autor responsável pela correspondência
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910
G. Stefanovich
Petrozavodsk State University
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910
A. Pergament
Petrozavodsk State University
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910
O. Berezina
Petrozavodsk State University
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910
N. Avdeev
Petrozavodsk State University
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910
A. Cheremisin
Petrozavodsk State University
Email: burduch@gmail.com
Rússia, Petrozavodsk, 185910