Electroluminescent study of the efficiency of silicon heterostructural solar cells
- Autores: Verbitskii V.1, Panaiotti I.1, Nikitin S.1, Bobyl’ A.1, Shelopin G.2, Andronikov D.2, Abramov A.2, Sachenko A.1, Terukov E.1,2
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Afiliações:
- Ioffe Physical Technical Institute
- R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
- Edição: Volume 43, Nº 9 (2017)
- Páginas: 779-782
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205895
- DOI: https://doi.org/10.1134/S1063785017090115
- ID: 205895
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Resumo
A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.
Sobre autores
V. Verbitskii
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021
I. Panaiotti
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021
S. Nikitin
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021
A. Bobyl’
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021
G. Shelopin
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064
D. Andronikov
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064
A. Abramov
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194064
A. Sachenko
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021
E. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194064