Electroluminescent study of the efficiency of silicon heterostructural solar cells
- Authors: Verbitskii V.N.1, Panaiotti I.E.1, Nikitin S.E.1, Bobyl’ A.V.1, Shelopin G.G.2, Andronikov D.A.2, Abramov A.S.2, Sachenko A.V.1, Terukov E.I.1,2
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Affiliations:
- Ioffe Physical Technical Institute
- R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
- Issue: Vol 43, No 9 (2017)
- Pages: 779-782
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205895
- DOI: https://doi.org/10.1134/S1063785017090115
- ID: 205895
Cite item
Abstract
A strong (by more than an order of magnitude) change in the electroluminescence intensity is observed for the first time in high-quality heterojunction solar cells that are based on a single-crystal silicon and have an efficiency of 18 to 20.5%. This effect occurs due to the sharp change in the concentration of the recombination centers on the surface of single-crystal silicon wafers in the course of their pyramidal texturing and also due to the rise in the series resistance. The effect can be used for a quantitative highly sensitive characterization of the texturing, which is a fundamentally important stage in fabricating highly efficient silicon solar cells.
About the authors
V. N. Verbitskii
Ioffe Physical Technical Institute
Author for correspondence.
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021
I. E. Panaiotti
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021
S. E. Nikitin
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021
A. V. Bobyl’
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021
G. G. Shelopin
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064
D. A. Andronikov
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064
A. S. Abramov
R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194064
A. V. Sachenko
Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021
E. I. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute
Email: vnverbitskiy@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064