Modification of the properties of vanadium dioxide by plasma-immersion ion implantation

S. V. Burdyukh; G. B. Stefanovich; A. L. Pergament; O. Ya. Berezina; N. A. Avdeev; A. B. Cheremisin

doi:10.1134/S1063785016010041

Modification of the properties of vanadium dioxide by plasma-immersion ion implantation

Авторлар: Burdyukh S.¹, Stefanovich G.¹, Pergament A.¹, Berezina O.¹, Avdeev N.¹, Cheremisin A.¹
Мекемелер:
1. Petrozavodsk State University
Шығарылым: Том 42, № 1 (2016)
Беттер: 32-35
Бөлім: Article
URL: https://journals.rcsi.science/1063-7850/article/view/196720
DOI: https://doi.org/10.1134/S1063785016010041
ID: 196720

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Аннотация

The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO₂ films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.