Radiation enhancement in doped AlGaN-structures upon optical pumping
- Авторлар: Bokhan P.1, Zhuravlev K.2, Zakrevsky D.1, Malin T.1, Osinnykh I.1, Fateev N.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 43, № 1 (2017)
- Беттер: 46-49
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/202297
- DOI: https://doi.org/10.1134/S1063785017010059
- ID: 202297
Дәйексөз келтіру
Аннотация
Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized AlxGa1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al0.5Ga0.5N and ~360 THz for Al0.74Ga0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm–1 for Al0.5Ga0.5N at λ ≈ 528 nm and g ≈ 20 cm–1 for Al0.74Ga0.26N at λ ≈ 468 nm.
Авторлар туралы
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
K. Zhuravlev
Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
I. Osinnykh
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
N. Fateev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090