Radiation enhancement in doped AlGaN-structures upon optical pumping

Abstract

Spectral characteristics of spontaneous and stimulated luminescence have been studied for molecular beam epitaxy synthesized Al_xGa_1–xN/AlN solid solutions with x = 0.5 and 0.74 upon optical pumping by pulse laser radiation with λ = 266 nm. Broadband radiation spectra with a width of ~260 THz for Al_0.5Ga_0.5N and ~360 THz for Al_0.74Ga_0.26N have been obtained. The measured enhancement factors are g ≈ 70 cm^–1 for Al_0.5Ga_0.5N at λ ≈ 528 nm and g ≈ 20 cm^–1 for Al_0.74Ga_0.26N at λ ≈ 468 nm.