The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering
- Авторлар: Tumarkin A.1, Razumov S.1, Gagarin A.1, Altynnikov A.1, Stozharov V.2, Kaptelov E.3, Senkevich S.3, Pronin I.3
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Мекемелер:
- St. Petersburg State Electrotechnical University
- Herzen State Pedagogical University
- Ioffe Physical Technical Institute
- Шығарылым: Том 42, № 2 (2016)
- Беттер: 143-145
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/197105
- DOI: https://doi.org/10.1134/S1063785016020140
- ID: 197105
Дәйексөз келтіру
Аннотация
Submicron thin layers of BaZrxTi1–xO3 are grown in-situ by RF magnetron sputtering of a ceramic target (x = 0.50) on a substrate of Pt/r-cut leucosapphire Al2O3. It is shown that the composition of the ferroelectric layer is not identical to the composition of the sputtered target and is shifted toward barium zirconate. The reasons for such behavior are discussed. The obtained samples are characterized by high breakdown voltages (1 MV/cm and higher). The structural and high-frequency dielectric properties are studied, and high tunability of the capacitance of thin layers is revealed.
Авторлар туралы
A. Tumarkin
St. Petersburg State Electrotechnical University
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 197376
S. Razumov
St. Petersburg State Electrotechnical University
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 197376
A. Gagarin
St. Petersburg State Electrotechnical University
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 197376
A. Altynnikov
St. Petersburg State Electrotechnical University
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 197376
V. Stozharov
Herzen State Pedagogical University
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 191186
E. Kaptelov
Ioffe Physical Technical Institute
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Senkevich
Ioffe Physical Technical Institute
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Pronin
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: Petrovich@mail.ioffe.ru
Ресей, St. Petersburg, 194021